Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition

نویسندگان

  • Koichi Endo
  • Kenji Norimatsu
  • Tomonori Nakamura
  • Takashi Setoya
  • Koji Nakamae
چکیده

a Semiconductor & Storage Products Company, Toshiba Corporation, 300, Ikaruga, Taishi-cho, Ibo-gun, Hyogo 671-1595, Japan b Semiconductor & Storage Products Company, Toshiba Corporation, 800, Yamanoisshiki-cho, Yokkaichi City, Mie 512-8550, Japan c Semiconductor & Storage Products Company, Toshiba Corporation, 1-1-1, Shibaura, Minato-ku, Tokyo 105-8001, Japan d System Division, Hamamatsu Photonics K.K., 812, Joko-cho, Higashi-ku, Hamamatsu City, Shizuoka 431-3196, Japan e Dept. Information Systems Engineering, Grad. Sch. Information Science and Technology, Osaka University, 2-1, Yamada-oka, Suita City, Osaka 565-0871, Japan

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 55  شماره 

صفحات  -

تاریخ انتشار 2015